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Вертикально-излучающий лазер спектрального диапазона 1.55 μm с туннельным переходом на основе слоев n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs
2020
Журнал технической физики
The design of the n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction (TJ) for 1.55 μm range vertical-cavity surface-emitting lasers (VCSELs), developed by wafer fusion technique of InAlGaAsP/InP optical cavity with AlGaAs/GaAs distributed Bragg reflectors is proposed and realized. The presence of oxidation-resistant InGaAs layers allows the use of molecular-beam epitaxy at all stages of the heterostructure fabrication, including for regrowth of the TJ surface relief. In the case of using the
doi:10.21883/pjtf.2020.17.49888.18393
fatcat:osy6y7sxrffn7bryvpwya5vj6q