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Single-electron transistors and memory cells with Au colloidal islands
2002
Applied Physics Letters
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In this study, single-electron transistors and memory cells with Au colloidal islands linked by C 60 derivatives have been fabricated by hybridization of top-down advanced electron-beam lithography and bottom-up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge-storage islands.
doi:10.1063/1.1527236
fatcat:h2p4mku62rgohfvc3menicv6ie