Analytical Modeling of the Spectral Response of Heterojunction Phototransistors

H.A. Khan, A.A. Rezazadeh
2009 IEEE Electron Device Letters  
Spectral response model for heterojunction phototransistors (HPTs) is developed from resolution of continuity equations that govern the excess optically generated minoritycarrier variation in the active layers of the HPT taking into account the related physical parameters. Realistic boundary conditions have been considered for efficient device operation, and a detailed optical-power absorption profile is constructed for accurate device modeling. The analysis is performed for GaAs-based HPTs,
more » ... the measured results at 635, 780, and 850 nm show a good agreement with theoretical calculations.
doi:10.1109/led.2009.2030376 fatcat:gql7goixrrefllycku2bpg4oui