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Preparation of YCr2Si2 Single Crystals from Molten Lead Solution Method
鉛融液法によるYCr2Si2単結晶の合成
1993
NIPPON KAGAKU KAISHI
鉛融液法によるYCr2Si2単結晶の合成
The single crystals of YCr2Si2 (tetragonal system) were prepared by the high temperature lead solution method using yttrium, chromium and silicon powders as starting materials in an argon atmosphere. The synthetic conditions for relatively large single crystals were estabilished. The optimum conditions for the growth of YCr2Si2 single crystals were ; atomic ratios of starting materials Si/Cr =1. 0, Y/Cr =5. 0 and Pb/Cr =20. 08, soaking temperature 1400 °C, soaking time 10 h and cooling rate of
doi:10.1246/nikkashi.1993.681
fatcat:cfl4cy3bnjgpvc5q47fwrl6rea