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155 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme
2014
Optics Express
We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured
doi:10.1364/oe.22.031286
pmid:25607076
fatcat:pj56y4wdkvfifhlrwxncync7zy