Device characteristics of InSnO thin-film transistors with a modulated channel

Chang Eun Kim, Ilgu Yun
2012 Semiconductor Science and Technology  
The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/ electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device
more » ... d that the device characteristic of TFTs can be enhanced by the modulated channel structure.
doi:10.1088/0268-1242/27/12/125006 fatcat:krkscseumjfuvlabmwqm3qmjte