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A new technique for obtaining a DC operating point o f large, hard-to-solve MOS circuits is reported in this paper. Based on homotopy, the technique relies on the provable global convergence of arclength continuation and uses a n o v el method for embedding the continuation parameter into MOS devices. The new embedding circumvents ineciencies and numerical failures that limit the practical applicability of previous simpler embeddings. Use of the technique in a production environment has led todoi:10.1145/240518.240571 dblp:conf/dac/RoychowdhuryM96 fatcat:nnf5lsbuincixlwhicqs76zhk4