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Исследование сильно легированных эпитаксиальных пленок n-3C-SiC, выращенных методом сублимации на основе полуизолирующих подложек 6H-SiC
2022
Fizika i Tekhnika Poluprovodnikov
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Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.
doi:10.21883/ftp.2022.02.51966.9752
fatcat:u46ekzjfdfd7vjk2ibilj4463y