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Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes
2009
Journal of Applied Physics
Preserved Fulltext
This work examines the enhancement of current on/off ratio in field effect transistor devices with bundled single-walled carbon nanotubes ͑CNTs͒ by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semiconducting CNTs while burning off the metallic ones by electrical current. By further incorporating a repeated gate voltage sweeping step, devices with low I off ͑less than 2 nA͒ and high I on / I off ,
doi:10.1063/1.3253737
fatcat:tw6t7n7oqredtc2rbyryiilc7i