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A CMOS fully-integrated wireless power receiver for autonomous implanted devices
2014
2014 IEEE International Symposium on Circuits and Systems (ISCAS)
In this paper we present the design of a wireless power receiver fully integrated. The circuit was constrained to occupy a silicon area of 1.5 mm × 1.5 mm in a 0.18 µm RF-CMOS process. The main target was to optimize the part of the power transfer efficiency concerning only the receiver side. In that way, we optimized the quality factor of the integrated inductor, the impedance matching conditions and the rectifier efficiency. The simulated quality factor of the integrated inductor was 22 using
doi:10.1109/iscas.2014.6865408
dblp:conf/iscas/CabreraS14
fatcat:qyf26uxnnncxbinhqsunb7yqpm