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Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
2009
Analytical Sciences
We report on the use of sensing devices that have a metal-insulator-gap-insulator-semiconductor structure. We have used capacitance-voltage measurements from a metal-insulator-gap-insulator-semiconductor sensing device to characterize different pH solutions and deoxyribonucleic acid (DNA) solutions. Hysteresis in the capacitance-voltage curves results from mobile ionic charges in the solutions and the influence of changes on the sensing surface condition. As the pH decreases in the pH range of
doi:10.2116/analsci.25.101
pmid:19139581
fatcat:z6lnt4h46ree5mcba2rwwdzrtu