A 0.5-V MTCMOS/SIMOX logic gate

T. Douseki, S. Shigematsu, J. Yamada, M. Harada, H. Inokawa, T. Tsuchiya
1997 IEEE Journal of Solid-State Circuits  
This paper proposes a multithreshold CMOS (MTCMOS) circuit that uses SIMOX process technology. This MTCMOS/SIMOX circuit combines fully depleted low-threshold CMOS logic gates and partially depleted high-threshold powerswitch transistors. The low-threshold CMOS gates have a large noise margin for fluctuations in operating temperature in addition to high-speed operation at the low supply voltage of 0.5 V. The high-threshold power-switch transistor in which the body is connected to the gate
more » ... d to the gate through the reverse-diode makes it possible to obtain large channel conductance in the active mode without any increase of the leakage current in the sleep mode. The effectiveness of the MTCMOS/SIMOX circuit is confirmed by an evaluation of a gate-chain test element group (TEG) and an experimental 0.5-V, 40-MHz, 16-b ALU, which were designed and fabricated with 0.25-m MTCMOS/SIMOX technology. Index Terms-CMOS digital integrated circuits, CMOSFET logic devices, low-voltage circuits, power control, silicon-oninsulator technology.
doi:10.1109/4.634672 fatcat:vtfuqbp34fdgfmvvj76p7j45u4