A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2004; you can also visit the original URL.
The file type is
This paper proposes a multithreshold CMOS (MTCMOS) circuit that uses SIMOX process technology. This MTCMOS/SIMOX circuit combines fully depleted low-threshold CMOS logic gates and partially depleted high-threshold powerswitch transistors. The low-threshold CMOS gates have a large noise margin for fluctuations in operating temperature in addition to high-speed operation at the low supply voltage of 0.5 V. The high-threshold power-switch transistor in which the body is connected to the gatedoi:10.1109/4.634672 fatcat:vtfuqbp34fdgfmvvj76p7j45u4