Self-assembled quantum dot transformations via anion exchange

Jeng-Jung Shen, April S. Brown, Yongqian Wang, Zhong L. Wang
2001 Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena  
We report the effect of dissimilar anion anneals on the properties of layered quantum dot structures exhibiting vertical self-organization. Such anneals may provide an additional means of controlling dot properties, such as composition, size, and position. In addition, the modification of surface strain is critical to the subsequent nucleation of dots after the initial seed layer. Anion exchange may modify the strain at the semiconductor surface. We find that the effects of P 2 and As 4 anneals
more » ... on InAs quantum dot size distributions are different. P 2 anneals at relatively high temperatures ͑350 °C͒ can cause the loss of the three-dimensional morphology due to surface exchange. P 2 anneals at lower temperatures ͑300 °C͒ appear to improve the uniformity of the dot size distribution. This behavior is not observed for anneals under As 4 . The dot size uniformity decreases by annealing dots under As 4 at 300 °C.
doi:10.1116/1.1385916 fatcat:zkjgmdych5ci3ln2etl26dmyi4