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In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Shun-ichiro Ohmi, Yeyuan Liu
2015 IEICE Electronics Express  

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Fully in-situ formation of Hf-based metal-oxide-nitride-oxidesilicon (MONOS) structures utilizing electron-cyclotron-resonance (ECR) plasma sputtering was investigated for the first time. It was found that the MONOS structures with in-situ formed HfN 0.5 gate electrode showed faster programing, high injection efficiency and larger flat-band voltage (V FB ) shift of 2.5 V compared to the MONOS structure with ex-situ formed Al gate electrode under programing voltage of 10 V. The retention
more » ... ristics of MONOS structure with in-situ formed HfN 0.5 gate electrode were also superior to the MONOS structure with ex-situ formed Al gate electrode. The degradation of retention for V FB shift after 60 min of programing was 40% for the MONOS structure with ex-situ formed Al gate electrode, while it was 16% for the MONOS structure with in-situ formed HfN gate electrode.
doi:10.1587/elex.12.20150969 fatcat:xbpei47akvf3lntmdq3es2rj3u
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Shun-ichiro Ohmi, Yeyuan Liu. "In-situ formation of Hf-based MONOS structures for non-volatile memory applications." IEICE Electronics Express 12.24 (2015) 20150969-20150969