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Fast physical models for Si LDMOS power transistor characterization
2011
2011 IEEE MTT-S International Microwave Symposium
A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance,
doi:10.1109/mwsym.2011.5972839
fatcat:c2ykfbw7anetnj7x5237pyikbq