Fast physical models for Si LDMOS power transistor characterization

John P. Everett, Michael J. Kearney, Hernan A. Rueda, Eric M. Johnson, Peter H. Aaen, John Wood, Christopher M. Snowden
2011 2011 IEEE MTT-S International Microwave Symposium  
A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance,
more » ... d gain, S 21 , and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC I DS -V DS characteristic and less than 5 ms to produce S-parameters at a single frequency. Index Terms -Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.
doi:10.1109/mwsym.2011.5972839 fatcat:c2ykfbw7anetnj7x5237pyikbq