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Strain engineering of single-layer MoS2
2015
2015 45th European Solid State Device Research Conference (ESSDERC)
In this work the effect of biaxial and uniaxial strain on the mobility of single-layer MoS2 at room temperatures is comprehensively studied. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered along with static screening. Ab-initio simulations are utilized to investigate the strain induced effects on the electronic bandstructure and the linearized Boltzmann transport equation is used to evaluate the low-field mobility under various strain conditions. The
doi:10.1109/essderc.2015.7324777
dblp:conf/essderc/HosseiniESPE15
fatcat:o4qlfpnfsjbwdcoj22tlvhqd5e