Copper nitride thin films prepared by radio‐frequency reactive sputtering

Toshiro Maruyama, Tomonori Morishita
1995 Journal of Applied Physics  
Copper nitride thin films were obtained by the reactive sputtering method. A metallic copper target was sputtered in nitrogen gas with radio-frequency (r-f) magnetron sputtering equipment. Highly [loo]-oriented polycrystalline films of the cubic anti-ReO, structure were obtained. Films with a lattice constant above 3.868 A were conductors, while films with a lattice constant below 3.868 A were insulators. The resistivity of conducting films was 0.5-3X IO-' 9 cm. The insulating films showed an
more » ... g films showed an optical energy gap of 1.3 eV, while the conducting films showed a smaller value which decreased with decreasing resistivity. Q 1995 American Institute of Physics.
doi:10.1063/1.359868 fatcat:63767vuna5c4ncavr33rnglobe