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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
This paper presents a 4.5 kV diode fabricated using a new ion irradiation technique whereby electrons are replaced by protons in a second irradiation step. The second proton peak is located close to the middle of the n-base. Compared to the combined ion-electron irradiation, diodes with a double proton peak show a smaller maximum reverserecovery current and a much smoother tail current behavior. The new device has an excellent ruggedness, being able to withstand a peak power of 1 MW/cm 2 .doi:10.1109/ispsd.1999.764078 fatcat:o6ra54xtmverrhborxfwboanga