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MODARES JOURNAL OF ELECTRICAL ENGINEERING
This paper presents a wide spectral range Single-Photon Avalanche Diode (SPAD) implemented in 65nm standard CMOS (Complementary Metal Oxide Semiconductor) Technology. The wide wavelength sensitivity is achieved using the p-type substrate layer instead of using a different well implanted inside the substrate. The higher electron impact ionization coefficient in compare with the hole impact ionization coefficient results in an increase in the photon detection probability (PDP) in the largerfatcat:v4qp2robz5gtjmed45vcje3xry