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Benchmarking Analogue Performance of Emerging Random Access Memory Technologies
2018
2018 IEEE International Symposium on Circuits and Systems (ISCAS)
In this work we present an evaluation routine aimed towards assessing the multibit capability of Resistive Random Access Memory (RRAM) technologies. We illustrate a characterization methodology for the maximum possible exploitation of the resistive states of a RRAM cell. Our characterization routine consists of a three phase algorithm: during the first it infers the polarity needed to induce a change in the device's conductance; the second stabilizes the resistive states of the device into a
doi:10.1109/iscas.2018.8351793
dblp:conf/iscas/StathopoulosKSP18a
fatcat:2by4ub7yaffblkckdf4faf4b2q