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A 2-bit operational metal/silicon-oxide-nitride-oxidesilicon (MONOS/SONOS) nonvolatile memory using an asymmetric double-gate (ASDG) MOSFET was studied to double flash memory density. The 2-bit programming and erasing was performed by Fowler-Nordheim (FN) tunneling in a NAND array architecture using individually controlled gates. A threshold voltage shift of programmed states for the 2-bit operation was investigated with the aid of a SILVACO R simulator in both sides of the gate by changingdoi:10.1093/ietele/e89-c.5.578 fatcat:s3hrss24krcbnp3qhhovmfya4e