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Микроволновая вольт-импедансная спектроскопия полупроводников
Журнал технической физики
We have tested experimentally the proposed method of microwave volt-impedance spectroscopy of semiconductors. The method allows to determine the local values of the semiconductor electrophysical parameters. The studies were performed on a homogeneous single-crystal GaAs wafer with a concentric antenna system formed on its surface. The resolution is determined by the diameter of the antenna central disk, which was amounted a = 12, 27, 57 μm. A constant bias voltage of 0 ≤ U ≤ 5 V was applieddoi:10.21883/jtf.2020.11.49988.115-20 fatcat:d56f7axgxrdn7b7eebvgeejtfi