High-Throughput Synthesis and Characterization of Eu Doped BaxSr2xSiO4 Thin Film Phosphors
High-Throughput techniques have been employed for the synthesis and characterisation of thin film phosphors of Eu doped BaxSr2-xSiO4. Direct synthesis from evaporation of the constituent elements under a flux of atomic oxygen on a sapphire substrate at 850 °C was used to directly produce thin film libraries (415 nm thickness) of the crystalline orthosilicate phase with the desired compositional variation (0.24 > x > 1.86). The orthosilicate phase could be synthesised as a pure, or predominantly
... e, or predominantly pure, phase. Annealing the as synthesised library in a reducing atmosphere resulted in the reduction of the Eu while retaining the orthosilicate phase, and resulted in a materials thin film library where fluorescence excited by blue light (450 nm) was observable by the naked eye. Parallel screening of the fluorescence from the combinatorial libraries of Eu doped BaxSr2-xSiO4 has been implemented by imaging the fluorescent radiation over the library using a monochrome digital camera using a series of colour filters. Informatics tools have been developed to allow the 1931 CIE 2 colour co-ordinates and the relative quantum efficiencies of the materials library to be rapidly assessed and mapped against composition and crystal structure and phase purity. The range of compositions gave values of CIE x between 0.17 and 0.52 and CIE y between 0.48 and 0.69 with relative efficiencies in the range 2.0 x 10 -4 to 7.6 x 10 -4 . Good agreement was obtained between the thin film phosphors and the fluorescence characteristics of a number of corresponding bulk phosphor powders. The thermal quenching of fluorescence in the thin film libraries was also measured in the temperature range 25-130°C: The phase purity of the thin film was found to significantly influence both the relative quantum efficiency and the thermal quenching of the fluorescence.