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Capacitive Behavior of Single Gallium Oxide Nanobelt
2015
Materials
In this research, monocrystalline gallium oxide (Ga 2 O 3 ) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga 2 O 3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga 2 O 3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga 2 O 3 nanobelt, indicating the
doi:10.3390/ma8085244
pmid:28793506
pmcid:PMC5455499
fatcat:iwkvi5juqng6pflr3zo5biohye