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Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size
2016
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the
doi:10.1117/12.2209724
fatcat:rl6bcajtejfmdbp5gcx67henta