Single event gate rupture in thin gate oxides [report]

F.W. Sexton, D.M. Fleetwood, M.R. Shaneyfelt, P.E. Dodd, G.L. Hash
1997 unpublished
The dependence of single event gate rupture (SEGR) critical field on oxide thickness is examined for thin gate oxides. Critical field for SEGR increases with decreasing oxide thickness, consistent with an increasing "intrinsic" breakdown field.
doi:10.2172/491556 fatcat:7cfqzia5b5aztfbqln5ocibnw4