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in excellent agreement with experimental work of various research groups - for a variety of growth conditions with temperatures in the range of 780-1100 C for O 2 ambient (1 atm). The activation energies for O 2 ambient, diffusion and oxidation reactions obtained in this work compares well with the experimental work . The model is general and is expected to be suitable for other orientations, oxidation in N 2 O ambient, and Si nitridation with change in the model parameter values.doi:10.1109/16.658854 fatcat:nf5bxxan3fdhvmeqlths2lntnm