Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications

A. Mahajan, P. Fay, M. Arafa, I. Adesida
1998 IEEE Transactions on Electron Devices  
in excellent agreement with experimental work of various research groups [5]-[7] for a variety of growth conditions with temperatures in the range of 780-1100 C for O 2 ambient (1 atm). The activation energies for O 2 ambient, diffusion and oxidation reactions obtained in this work compares well with the experimental work [1]. The model is general and is expected to be suitable for other orientations, oxidation in N 2 O ambient, and Si nitridation with change in the model parameter values.
more » ... ENCES [1] B. E. Deal and A. S. Grove, "General relationship for the thermal oxidation of silicon,"
doi:10.1109/16.658854 fatcat:nf5bxxan3fdhvmeqlths2lntnm