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Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519)
This work investigates the thermal stability and barrier characteristics of two species of silicon carbide dielectric films, a-SiCN with a dielectric constant of 4.9 and a-Sic with a dielectric constant of 3.8. The TDDB lifetime of Cu damascene metallization structure is greatly improved by using a a-SiCNI a-SIC bilayer dielectric stack as the etching stop layer (ESL). This improvement is presumably due to the a -S i c dielectric's lower leakage current, absence of nitridation on Cu surface,doi:10.1109/iitc.2002.1014933 fatcat:doev4h6kdzdihg33gvsbhymo3e