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Compared to the traditional DRAM technology, floating body DRAM (FBDRAM) has many advantages, such as high density, fast access speed, long retention time, etc. More important, FBDRAM is compatible with the traditional CMOS technology. It makes FBDRAM more competitive than other emerging memory technologies to be employed as on-chip memory. The characteristic variance of memory cells caused by process variations, however, has become an obstacle to adopt FBDRAM. In this work, we build a circuitdoi:10.1109/date.2012.6176712 dblp:conf/date/SunXX12 fatcat:vajx3323tnh3vlpf5fxqa5i2zm