Abstfuct-Leakage current through the parasitic channel formed at the sidewall of the SO1 active region has been investigated by measuring the subthreshold I-V characteristics. Partially depleted (PD, -2500 A) and fully depleted (FD, -800 A) SO1 NMOS transistors of enhancement mode have been fabricated using the silicon direct bonding (SDB) technology. Isolation processes for the SO1 devices were LOCOS, LOCOS with channel stop ion implantation or fully recessed trench (FRT). The electron

more »

... ation of the parasitic channel is calculated by the PISCES IIh simulation. As a result, leakage current of the FD mode SO1 device with FRT isolation at the front and hack gate biases of 0 V was reduced to -PA and no hump was seen on the drain current curve.