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Reduction of leakage current at the gate edge of SDB SOI NMOS transistor
IEEE Electron Device Letters
Abstfuct-Leakage current through the parasitic channel formed at the sidewall of the SO1 active region has been investigated by measuring the subthreshold I-V characteristics. Partially depleted (PD, -2500 A) and fully depleted (FD, -800 A) SO1 NMOS transistors of enhancement mode have been fabricated using the silicon direct bonding (SDB) technology. Isolation processes for the SO1 devices were LOCOS, LOCOS with channel stop ion implantation or fully recessed trench (FRT). The electrondoi:10.1109/55.790720 fatcat:gtlkhe6ngvgpxnlhmh7c4sdzym