Characterization of cooled large-area silicon avalanche photodiodes

Jeffrey J. Fox, Nathan Woodard, Gregory P. Lafyatis
1999 Review of Scientific Instruments  
We characterize the operation of large-area high-gain silicon avalanche photodiodes ͑APDs͒ at near liquid-nitrogen temperatures. The APDs that we studied have active areas of 64 mm 2 and have gains of up to 20 000 at 85 K. We characterized the devices for both the usual, analog mode of operation and for doing single-photon pulse counting. The experimental results were found to be reasonably well described by the McIntyre theory. We independently measured k, the hole/electron ionization ratio-a
more » ... ionization ratio-a key parameter in the McIntyre theory-and found it to be ϳ6ϫ10 Ϫ4 . Cooled, large-area, high-gain APDs compare favorably to photomultiplier tubes in applications that require high sensitivity at near-infrared wavelengths.
doi:10.1063/1.1149693 fatcat:i2us6x4yzbfy5jf4ynkr3jsu7i