Effect of the tunneling rates on the conductance characteristics of single-electron transistors

A. Scholze, A. Schenk, W. Fichtner
1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)  
We present calculations of the linear-response conductance of a SiGe based singleelectron transistor (SET). The tunneling rates through the source-and lead barriers are calculated using Bardeen's transfer Hamiltonian formalism [4]. The tunneling matrix elements are calculated for transitions between the OD states in the quantum dot and the lowest subband in the 1D constriction. We compare the results for the conductance peaks with those from calculations with a constant rate, i. e. where the
more » ... i. e. where the shape of the peaks is only due to energetic arguments.
doi:10.1109/sispad.1999.799288 fatcat:vkrqnxwumve6dfq72lhphsxtcm