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Low-temperature hermetic wafer bonding using In/Sn interlayer and Cu/Ti/Au metallization was investigated for microelectromechanical systems packaging application. In this case, the thin Ti layer was used as a buffer layer to prevent the diffusion between solder interlayer and Cu after deposition and to save more solders for diffusion bonding process. Bonding was performed in a wafer bonder at 180 and 150 C for 20 min with a pressure of 5.5 MPa. It was found that bonding at 180 C voids freedoi:10.1109/tcapt.2009.2016108 fatcat:ap4fvbhybfbx7o2topo55gb4ce