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Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
2016
Scientific Reports
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range
doi:10.1038/srep27451
pmid:27271792
pmcid:PMC4895219
fatcat:stiix3oozfcfdcvidknga4c744