Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1−xAs multiple quantum wells

H. X. Jiang, E. X. Ping, P. Zhou, J. Y. Lin
1990 Physical Review B (Condensed Matter)  
Experimentally observed two-exponential decay of excitonic transitions in GaAs-Al Gal -As multiple quantum wells has been successfully interpreted in terms of the exciton transfer between the continuum (free carriers) and the bound states. The calculation results obtained from this exciton-transfer model are in excellent agreement with experimental observations. The rates of the exciton transfer and the free-carrier recombination have been obtained. We have demonstrated that the emission-energy
more » ... dependence of the decay time constant of the slower decay component is caused by the variation in exciton binding energy induced by interface roughness in the quantum wells.
doi:10.1103/physrevb.41.12949 pmid:9993780 fatcat:7w3devaognfbhh6rljxe7p5owu