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The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic contribution to the resistance, R_el(T), is a nonmonotonic function of T, exhibiting thermal activation, R_el(T) exp-E_a/kT, for kT<EF. The form of R_el(T) is independent of density, indicating a fundamental relationship between the low and high T scattering mechanisms in thedoi:10.1103/physrevlett.83.2805 fatcat:huot3gj7j5hcvf55hel36z3uhe