Temperature-Stable Silicon Oxide (SilOx) Micromechanical Resonators

Roozbeh Tabrizian, Giorgio Casinovi, Farrokh Ayazi
2013 IEEE Transactions on Electron Devices  
This paper presents a passive temperature compensation technique that can provide full cancellation of the linear temperature coefficient of frequency (TCF 1 ) in silicon resonators. A uniformly distributed matrix of silicon dioxide pillars is embedded inside the silicon substrate to form a homogenous composite silicon oxide platform (SilOx) with nearly perfect temperature-compensated stiffness moduli. This composite platform enables the implementation of temperature-stable microresonators
more » ... icroresonators operating in any desired in-and out-of-plane resonance modes. Full compensation of TCF 1 is achieved for extensional and shear modes of SilOx resonators resulting in a quadratic temperature characteristic with an overall frequency drift as low as 83 ppm over the industrial temperature range (−40 • C to 80 • C). Besides a 40 times reduction in temperatureinduced frequency drift in this range, SilOx resonators exhibit improved temperature stability of Q compared with their single crystal silicon counterparts. Index Terms-High quality factor, homogenous composite, low insertion loss, silicon dioxide pillar matrix, silicon oxide (SilOx), temperature coefficient of frequency (TCF), temperature compensated crystal oscillator (TCXO), temperature compensation.
doi:10.1109/ted.2013.2270434 fatcat:6d5562nhjza5fpkkvdyg4jk3jq