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A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator
unpublished
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A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2µm SiGe HBT process. Up to-5 dBm output power is achieved at 180 GHz using a technology with a transition frequency f T of 200 GHz and maximum oscillation frequency f MAX of 275 GHz. Preliminary phase noise measurements show a phase noise of less than-90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.
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