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Metal–Insulator Transition in Three-Dimensional Semiconductors
We use a random gap model to describe a metal–insulator transition in three-dimensional semiconductors due to doping, and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point,doi:10.3390/sym11111345 fatcat:5dgoqadxv5bshlb66hqnyp25um