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Annealing Effect on Transport Properties of Microfabricated La0.7Sr0.3MnO3 Films
Journal of the Magnetics Society of Japan
To establish a technique for fabricating microstructural devices using half-metallic manganese oxides without any negative effect of microfabrication, we investigated the effects of defects in La0.7Sr0.3MnO3 film caused by Ar ion milling and a method for removing them by means of annealing. Our results show that Ar ion milling results in a resistance increase of up to several orders in magnitude with a damage depth of about 40 nm. We found that annealing in oxygen atmosphere corrects thesedoi:10.3379/jmsjmag.31.333 fatcat:4fmdf2erx5filng4wujrr2jui4