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Adjustable load-modulation asymmetric Doherty amplifier design using nonlinear embedding
2014 IEEE MTT-S International Microwave Symposium (IMS2014)
We developed a new asymmetric Doherty load modulation matching network using identical transistors for the main and auxiliary amplifiers. Asymmetric Doherty power amplifiers (PA) require a larger size transistor for the auxiliary PA than for the main PA to provide the higher power and wider load modulation range. Additional impedance transformers are introduced to alleviate this requirement when using identical devices. The drain bias voltage of the main amplifier is also reduced to achieve adoi:10.1109/mwsym.2014.6848558 fatcat:qlhc6fu3ivhzljnzypwnwwkc54