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The rapid-thermal-annealing effect on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals is investigated by means of capacitance-voltage (C -V) and capacitance decay measurements. The C -V curves show the hysteresis indicating the charge storage effect in Ge nanocrystals. The hysteresis width shows strong annealing temperature dependence and shows the maximum at 700°C meaning the maximum nanocrystal density. Capacitance decay experiment at flat-band voltage showsdoi:10.1063/1.1567039 fatcat:asdr2x3mcnakbhbjmaz65s34me