GaN thin film growth using vapor-phase epitaxy is a well-studied process that typically requires growth temperatures in the range of 950~1000 o C. Tris(N,N-dimethyldithiocarbamato)-gallium(III) (Ga(mDTC) 3 ) was investigated in this study, a new precursor material for the GaN film deposition by hot-wall VPE technique, in an effort to reduce the growth temperature. TMGa, HCl and NH 3 were used as gas source precursors. Parametric growth studies were performed to optimize the growth temperature

more »

... d the distance between the gas outlet and the substrate (z-position) using this process. The optimal growth temperature was found to be 850 o C, and the optimal z-position was determined to be in the range of 12.5 to 15 cm. XRD studies showed that this growth method produces high-crystalline GaN thin films at relatively lower deposition temperature compared to existing growth techniques.