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A series of Ga͑AsSb͒ / GaAs/ ͑AlGa͒As samples with varying GaAs spacer width are studied by electric-field modulated absorption ͑EA͒ and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well ͑QW͒ transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differsdoi:10.1063/1.2433715 fatcat:gmdorh5dw5e37fawelb7k2lmw4