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Fabrication and Characterization of Cadmium Telluride based thin Film Transistors
SOP Transactions on Applied Physics
Cadmium telluride (CdTe) based thin film transistors (TFTs) have been fabricated by vacuum deposition technique and the fabricated TFTs are evaluated for their performance. From the study, it has been concluded that cadmium telluride can be used as active layer in thin film transistors. Also silicon monoxide (SiO) has been successfully used as insulating layer which shows good adhesion with cadmium telluride and also with metal-electrode. It has been observed that the TFT fabricated can be useddoi:10.15764/aphy.2014.02009 fatcat:uihqerpcizfs7he7vmw7ifwqga