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Fabrication and Characterization of Cadmium Telluride based thin Film Transistors
2014
SOP Transactions on Applied Physics
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Cadmium telluride (CdTe) based thin film transistors (TFTs) have been fabricated by vacuum deposition technique and the fabricated TFTs are evaluated for their performance. From the study, it has been concluded that cadmium telluride can be used as active layer in thin film transistors. Also silicon monoxide (SiO) has been successfully used as insulating layer which shows good adhesion with cadmium telluride and also with metal-electrode. It has been observed that the TFT fabricated can be used
doi:10.15764/aphy.2014.02009
fatcat:uihqerpcizfs7he7vmw7ifwqga