Energy Spectrum and Carrier Statistics Numerical Analysis for Nanostructure Device Application

Ismail Saad, Khairul A.M., Abu Bakar A.R., Nurmin Bolong, Kenneth T.T.K., Vijay K. Arora
2012 2012 Third International Conference on Intelligent Systems Modelling and Simulation  
Numerical evaluation of energy spectrum and carrier statistics for nanostructure device application is presented. The low-dimensional energy spectrum was successfully derived for the respective quasi 3D, 2D and 1D system that invoked the effect of quantum confinement (QCE) comparable to the De Broglie wavelength ( D  10nm). For non-degenerately (ND) doped samples the Fermi-Dirac (FD) integral is well approximated by Boltzmann statistics. However, in degenerate doped quasi 3D, 2D and 1D
more » ... D, 2D and 1D device, the FD integral is found to be approximated by order one-half, zero and minus one-half respectively. The Fermi energy is revealed to be a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the ND regime. However, for strongly degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration. Keywords-Energy spectrum ;carrier statistics;nano-MOSFET;De Broglie wavelength;quantum confinement effect (QCE), nanowire I.
doi:10.1109/isms.2012.95 fatcat:snpa2uzzgvb4hitmvpwtioecha