Distribution of impurities in the bases of high voltage Si diodes

R. Pūras
2006 Lithuanian Journal of Physics  
Spatial distribution of impurities in the base of high voltage planar diodes with additionally incorporated Au atoms (p-n junction area from 1 to 270 mm 2 ) was inferred according the capacitance-voltage (C-U ) characteristics measured by industrial capacitance meters. The capacitance divider and linearly varying voltage method (with the amplitude up to 1000 V) were additionally used to extend the operation of capacitance meters to a wider frequency range and to eliminate the influence of
more » ... e current. We had found a nonuniform distribution of dopants (Au atoms) in the diode base, which are introduced to improve the frequency characteristics of the diodes.
doi:10.3952/lithjphys.46303 fatcat:pz3hgn44nzd3baisypksp7zt5y