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Tuning the Exciton Binding Energies in Single Self-AssembledInGaAs/GaAsQuantum Dots by Piezoelectric-Induced Biaxial Stress

F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G. Schmidt
2010 Physical Review Letters  

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We study the effect of an external biaxial stress on the light emission of single InGaAs=GaAsð001Þ quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X þ ) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X
more » ... and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering" scheme.
doi:10.1103/physrevlett.104.067405 pmid:20366855 fatcat:u2tst7lfmzcxtozl3dikblran4
Citation

F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G. Schmidt. "Tuning the Exciton Binding Energies in Single Self-AssembledInGaAs/GaAsQuantum Dots by Piezoelectric-Induced Biaxial Stress." Physical Review Letters 104.6 (2010)