A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2021; you can also visit the original URL.
The file type is
1.3-μm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization
Journal of Physics: Photonics
et al.. 1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization. Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; ondoi:10.1088/2515-7647/aba5a6 fatcat:kjxfsn3nuffkfpl4acisdst25i