In-situ TEM Study of Thin-film Vanadium Oxide Stability

BD Gauntt, EC Dickey
2009 Microscopy and Microanalysis  
Vanadium oxide thin films were co-deposited via reactive pulsed-dc sputtering onto both formvarcoated Cu TEM grids and SiO 2 -coated Si wafers. A trend was observed throughout the series whereby increasing oxygen partial pressure in the growth chamber caused an increase in both the oxygen content and the disorder in the films [1]. Films deposited below a PO 2 of 5% exhibited the presence of nanocrystals and films deposited above a PO 2 of 5% were amorphous. Two films from the series, one
more » ... ystalline with an amorphous component, and the other completely amorphous, were found to have the same stoichiometry via rutherford backscattering spectroscopy. Though the bulk stoichiometry of both films was found to be VO 2 , the nanocrystalline phase was determined to be the FCC phase, which at equilibrium is characteristic of VO x , where 0.8<x<1.3.
doi:10.1017/s1431927609096366 fatcat:hynhhdqwebae5irnw7wfb42x3a