Vanadium oxide thin films were co-deposited via reactive pulsed-dc sputtering onto both formvarcoated Cu TEM grids and SiO 2 -coated Si wafers. A trend was observed throughout the series whereby increasing oxygen partial pressure in the growth chamber caused an increase in both the oxygen content and the disorder in the films [1]. Films deposited below a PO 2 of 5% exhibited the presence of nanocrystals and films deposited above a PO 2 of 5% were amorphous. Two films from the series, one

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... ystalline with an amorphous component, and the other completely amorphous, were found to have the same stoichiometry via rutherford backscattering spectroscopy. Though the bulk stoichiometry of both films was found to be VO 2 , the nanocrystalline phase was determined to be the FCC phase, which at equilibrium is characteristic of VO x , where 0.8<x<1.3.